Non-Polar Freestanding Gan Substrates (a-plane and m-plane)
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- T/T
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Basic Info
| Place of Origin: | China |
|---|---|
| Payment Type: | T/T |
Product Description
Product Description
Applications:
Blue LDs(405nm < 400_415nm>) can be used for high-density data storage, laser print, laser display, laser projection camera, etc.
GaN-based MQWs LDs
Short wavelength laser: Green/UV/Deep UV
Specifications:
Item:GaN-FS-a/GaN-FS-m
Dimensions
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness:350 ± 25 µm
Orientation:a-plane and m-plane ± 1°
TTV(Total Thickness Variation) ≤15 µm
BOW≤20 µm
Conduction Type N-type /Semi-Insulating
Resistivity(300K)< 0.5 Ωcm/ >106 Ωcm
Dislocation Density:Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing:Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
* Other thickness, size and offcut options available
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