Free-Standing Gan Substrates (Customized size)

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Basic Info

Place of Origin:	Zhengzhou, Henan, China
Payment Type:	T/T

Product Description

Applications:

Blue LDs(405nm < 400_415nm>) can be used for high-density data storage, laser print, laser display, laser projection camera, etc.

GaN-based MQWs LDs

Short wavelength laser: Green/UV/Deep UV
Free-Standing Gan Substrates (Customized size)

Specifications:

Item:GaN-FS-10

Dimensions:10.0mm×10.5mm

Marco Defect Density:LD Level > 90%

Thickness 350 ± 25 µm

Orientation C-axis(0001) ± 0.5°

TTV(Total Thickness Variation) ≤15 µm

BOW ≤20 µm

Conduction Type N-type Semi-Insulating

Resistivity(300K) < 0.5 Ωcm >106 Ωcm

Dislocation Density Less than 5x106 cm-2

Useable Surface Area > 90%

Polishing:Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package:Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

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