2" Aln Templates

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Basic Info

Place of Origin:	Zhengzhou, Henan, China
Payment Type:	T/T

Product Description

Specifications:

Item:GaN-T-N

Dimensions: 2"

Thickness:2-4 µm

Orientation:C-axis(0001) ± 1°

Conduction Type N-type

Resistivity(300K)< 0.05 Ωcm

Dislocation Density:3x108 cm-2

Substrate structure:Thick GaN on Sapphire(0001)

Useable Surface Area> 90%

Polishing:Standard: SSP

Option: DSP

Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

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